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|  GGA+U |  | 
 Date: 2019/05/23 18:45
 Name: reza
  <e_majidinia@yahoo.com>
 
Hello to all.I am working on GaFeO3 with doppant.I have done optimization of cell parameter,internal coordinate, k grid and Ecut and then calculating properties of GaFeO3 with out Hubbard parameter. the size of gap was few. then I inserted Hubbard parameter and calculating the properties. Is it correct or all optimization steps are done wth Hubbard?
 Thanks alot.
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